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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation CONDITIONS VBE = 0 V TYP. MAX. 1100 700 0.5 1 46 UNIT V V A A W Tmb 25 C PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION emitter collector base collector PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -40 MAX. 1100 700 0.5 1 0.2 0.3 0.3 46 150 150 UNIT V V A A A A A W C C Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 60 MAX. 2.7 UNIT K/W K/W 1 Turn-off current. November 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 ELECTRICAL CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO hFE hFE Cob Emitter cut-off current DC current gain DC current gain Output capacitance PARAMETER CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 5 V; IC = 0 A IC = 50 mA; VCE = 5 V IC = 20 mA; VCE = 5 V VCB = 100 V; f = 1MHz MIN. 26 26 TYP. 50 50 4.7 MAX. 100 1.0 1 125 150 UNIT A mA mA pF November 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 2.5E-03 2.5 Collector current (mA) 60uA 2 120 110 100 90 80 70 60 50 40 30 20 10 0 8 10 PD% Normalised Power Derating 2.0E-03 50uA 1.5 1.5E-03 40uA 1.0E-03 1 30uA 20uA 10uA 0 2 4 Vce (V) 6 5.0E-04 0.5 0.0E+00 0 0 20 40 60 80 100 Tmb / C 120 140 Fig.1. Typical transfer characteristics. IC = f(VCE) ; parameter IB . Collector current (A) 1.2mA 0.05 0.04 0.03 0.02 0.01 0 0 2 4 Vce (V) 6 8 10 0.98mA 10 Fig.4. Normalised power dissipation. PD% = 100PD/PD 25 C = f (Tmb) 0.06 Zth / (K/W) bux86p 0.5 0.78mA 1 0.2 0.1 0.05 0.58mA 0.38mA 0.18mA 0.01 0.1 P D tp D= tp T t 0.02 T D= 0 1.0E-06 0.0001 t/s 0.01 1 Fig.2. Typical transfer characteristics. IC = f(VCE) ; parameter IB . D.C Current Gain hFE 0.78 Vce = 5V Tj = 125 C 100 0.76 0.74 Tj = 25 C Tj = -40 C 0.68 10 0.66 0.64 0.62 1 0.1 1 10 Collector current (mA) 100 0.6 0.72 0.7 Fig.5. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VBESAT (V) 1000 Ic=100mA Ic = 20 mA Ic= 50mA 0 5 IB (mA) 10 15 20 Fig.3. Typical DC current gain. hFE = f(IC); parameter VCE. Fig.6. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC November 1999 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 10 Vce(sat) (V) 100 Output Capacitance Cob (pF) 1 Ic = 100mA 10 0.1 Ic=20mA Ic = 50mA 0.01 0.1 1 IB (mA) 10 100 1 1 10 Vcb (V) 100 Fig.7. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC Fig.8. Typical output capacitance COB. COB = f(VCB); November 1999 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.9. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1999 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1999 6 Rev 1.000 |
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